Active matrix type LCD having short resistors made of microcrystalline n+Si

A method for fabricating an active matrix type liquid crystal display device including:

• a plurality of gate signal lines;
• a plurality of source signal lines crossing the plurality of gate signal lines;
• a switching element provided in the vicinity of each crossed point of the plurality of gate signal lines and the plurality of source signal lines;
• and
• a pixel electrode connected to the switching element, the method comprising the steps of:
• forming the plurality of gate signal lines;
• forming an insulating layer covering the plurality of gate signal lines;
• forming contact holes at the insulating layer so that at least a part of input terminals of the plurality of gate signal lines are exposed;
• forming short resistors made of microcrystalline n+Si on portions of the insulating layer so as to correspond to the intervals between the plurality of gate signal lines;
• and
• forming a conductive layer covering at least a part of the contact holes and at least a part of the short resistors, so that the plurality of gate signal lines are electrically connected to each other via the short resistors.