Interconnect structures for integrated circuits

An integrated circuit having an interconnect structure comprising:

• a first dielectric layer having a first surface, having a second surface opposing the first surface, and having an opening extending from the second surface to the first surface;
• a second dielectric layer having a first surface, having a second surface opposing the first surface, and having an opening extending from the second surface to the first surface;
• a first horizontal metallic interconnect including a first surface having a length and a width and disposed on the first dielectric first surface, and including a second surface extending approximately the width of the first horizontal metallic interconnect and having a first thickness;
• a second horizontal metallic interconnect including a first surface having a length and a width and disposed on the first dielectric second surface, including a second surface extending approximately the width of the second horizontal metallic interconnect and having a second thickness, including a third surface opposing the first surface and disposed on the second dielectric first surface, and including a fourth surface extending approximately the width of the second horizontal metallic interconnect and having a third thickness;
• a first vertical metallic interconnect having a body portion disposed within the opening of the first dielectric, a proximal portion having a surface in contact with the first horizontal metallic conductor second surface to form a first substantially vertical contact interface, and a distal portion having a surface in contact with the second horizontal metallic conductor second surface to form a second substantially vertical contact interface;
• and
• a second vertical metallic interconnect having a body portion disposed within the opening of the second dielectric and a proximal portion having a surface in contact with the second horizontal metallic conductor fourth surface to form a third substantially vertical contact interface;
• wherein the first and second horizontal metallic interconnects are comprised of respective Titanium/Titanium Nitride/Aluminum-Copper alloy/Titanium Nitride stacks, and wherein the first and second vertical metallic interconnects are comprised of respective Titanium/Titanium Nitride layer stacks and respective Tungsten.

An integrated circuit interconnect structure comprising:

• a first metallic line having a generally planar surface;
• a second metallic line having a generally planar surface;
• a first metallic plug having a first end region coupled to the first line and a second end region coupled to the second line, wherein a first interface, disposed between the first plug first end region and the first line, extends into the first line beyond the surface thereof, and a second interface, disposed between the first plug second end region and the second line, extends into the second line beyond the surface thereof;
• a third metallic line having a generally planar surface;
• and
• a second metallic plug having a first end region coupled to the first line and a second end region coupled to the third line, wherein a first interface, disposed between the second plug first end region and the first line, extends in to the first line beyond the surface thereof, and a second interface, disposed between the second plug second end region and the third line, extends in the third line beyond the surface thereof;
• wherein the first, second, and third metallic lines are comprised of respective Titanium/Titanium Nitride/Aluminum-Copper alloy/titanium Nitride stacks, and the first and second metallic plugs are comprised of respective Titanium/Titanium Nitride layer stacks and respective Tungsten.