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US 5,691,571 AGranted
Semiconductor device having fine contact hole with high aspect ratio
AssigneeNEC Corporation
InventorsKazuyuki Hirose, Kuniko Kikuta
Life of this patent
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Abstract
A semiconductor device includes at least one hole formed on a semiconductor substrate. A barrier metal is formed on at least one portion in contact with the semiconductor substrate in the hole. A metal interconnection is constituted by two layers including a first Al-containing metal film formed on the barrier metal, and a second Al-containing metal film formed on the first Al-containing metal film and having a melting point lower than the melting point of the first Al-containing metal film.
Claims6
A semiconductor device comprising:
- at least one hole formed on a semiconductor substrate;
- a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole;
- and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn alloy film having an Sn concentration of between 0.1 and 98 atom %.
A semiconductor device comprising:
- at least one hole formed on a semiconductor substrate;
- a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole;
- and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn--Cu alloy film having an Sn concentration of between 0.1 and 98 atom %, and a Cu concentration of between 0.1 and 2 atom %.
Dependencies are inferred from the claim text.