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US 5,691,247 AGranted
Method for depositing a flow fill layer on an integrated circuit wafer
AssigneeTower Semiconductor Ltd.
InventorsZmira Lavie, Aviad Roth, Jeff Levy, Itzhak Edrei
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Abstract
An improved method for depositing the cap layer of a flow fill layer of an integrated circuit. The cap layer is deposited in at least two steps, instead of all at once.
Claims5
In a process for depositing a flow fill layer on an integrated circuit wafer, the flow fill layer including a cap layer for preventing crack formation during the evaporation of water, an improved method for depositing the cap layer to a final thickness, comprising the steps of:
- (a) depositing a first thickness of the cap layer on the wafer;
- (b) evaporating at least a portion of the water via said first thickness of the cap layer subsequent to depositing said first thickness;
- and
- (c) subsequent to said evaporation, depositing a second thickness of the cap layer on the wafer, wherein said first and second thicknesses combined equal said final thickness.
1 more element
Dependencies are inferred from the claim text.