Method for fabricating an electrical connect above an integrated circuit
AssigneeInternational Business Machines Corporation
InventorsMark Charles Hakey, Steven John Holmes, John Michael Wursthorn
Life of this patent
Estimating the term…
Loading patent…
AssigneeInternational Business Machines Corporation
InventorsMark Charles Hakey, Steven John Holmes, John Michael Wursthorn
Estimating the term…
A transfer metal configuration and fabrication process possessing increased probability of intersecting a transverse metallization level are presented, without employing an increase in actual metal thickness. The transfer metal is configured with a non-rectangular transverse cross-section such that the thickness of the electrical connect remains the same, but the transverse contact area of the exposed metal is increased. The entire transfer metal may have the same transverse cross-sectional configuration or have portions with different transverse configurations. If different configurations are employed, each portion of the transfer metal to be transversely intersected has the enhanced cross-sectional configuration. A tiered transverse configuration is presented which facilitates electrical connection of the transfer metal to a metal level on a face of a semiconductor cube structure.
A method for fabricating an electrical connect above an integrated circuit, said method comprising the steps of:
A method for fabricating an electrical connect above an integrated circuit having an active region and a kerf region at least partially surrounding said active region, said method comprising the steps of:
Dependencies are inferred from the claim text.