Method for fabricating semiconductor device
AssigneeFujitsu Limited
InventorsYoshiyuki Ohkura, Hideki Harada, Tadasi Oshima
Life of this patent
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Abstract
A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.
Claims13
A method for fabricating a semiconductor device comprising:
- a granular insulators laying step of laying granular insulators over an upper surface of a semiconductor substrate to provide the granular insulators in concavities in the upper surface of the semiconductor substrate;
- and
- a granular insulators removing step of removing the granular insulators provided on convexities on the upper surface of the semiconductor substrate;
- the granular insulators having a particle size between 0.3 to 1.5 times the height of the concavities.
Dependencies are inferred from the claim text.