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US 5,691,235 AGranted
Method of depositing tungsten nitride using a source gas comprising silicon
AssigneeMicron Technology, Inc.
InventorsScott Meikle, Trung Doan
Life of this patent
Estimating the term…
Abstract
A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas, such as silane for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.
Claims14
A method for forming a layer overlying a substrate, comprising the following steps:
- providing the substrate in a chamber;
- introducing a gas comprising nitride into the chamber;
- introducing a gas comprising tungsten into the chamber;
- introducing a gas comprising silicon into the chamber;
- providing conditions sufficient to deposit tungsten nitride;
- and
- depositing a layer of tungsten nitride comprising silicon to overly the substrate.
4 more elements
A method for forming a layer overlying a substrate, comprising the following steps:
- providing the substrate in a chamber;
- introducing a gas comprising nitride into the chamber;
- introducing a gas comprising tungsten into the chamber;
- introducing a gas comprising silane into the chamber;
- providing conditions sufficient to deposit tungsten nitride;
- and
- depositing a layer of tungsten nitride comprising silicon to overly the substrate.
4 more elements
A method for forming a capacitor electrode, comprising the following steps:
- providing a substrate in a chamber;
- introducing a gas comprising nitride into the chamber;
- introducing a gas comprising tungsten into the chamber;
- introducing a gas comprising silicon into the chamber;
- providing conditions sufficient to deposit tungsten nitride;
- depositing a layer of tungsten nitride comprising silicon to overly the substrate;
- patterning said layer of tungsten nitride comprising silicon to define the electrode;
- and
- removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the capacitor electrode.
6 more elements
A method for forming a gate electrode, comprising the following steps:
- providing a substrate in a chamber;
- introducing a gas comprising nitride into the chamber;
- introducing a gas comprising tungsten into the chamber;
- introducing a gas comprising silicon into the chamber;
- providing conditions sufficient to deposit tungsten nitride;
- depositing a layer of tungsten nitride comprising silicon to overly the substrate;
- patterning said layer of tungsten nitride comprising silicon to define the gate electrode;
- and
- removing a portion of said layer of tungsten nitride comprising silicon, a remaining portion of said layer of tungsten nitride comprising silicon forming at least a portion of the gate electrode.
6 more elements
Dependencies are inferred from the claim text.