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US 5,691,231 AGranted
Method of manufacturing silicon on insulating substrate
AssigneeNEC Corporation
InventorsKenya Kobayashi, Tomohiro Hamajima, Kensuke Okonogi
Life of this patent
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Abstract
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.
Claims3
A Silicon On Insulating substrate manufacturing method comprising:
- a first step in which a buried insulation film is formed in portions of one main surface of a first or second silicon single crystal substrate;
- a second step in which the surface of the insulation film and the surface of silicon single crystal on the main surface of the silicon single crystal substrate into which said insulation film is buried are made a level surface along the same plane;
- a third step in which a polycrystal silicon layer is formed on said leveled surface;
- a fourth step in which the surface of said polycrystal silicon layer is leveled by grinding and polishing;
- a fifth step in which the leveled surface of said polycrystal silicon layer is bonded together with one main surface of the first or second silicon single crystal substrate into which an insulation film is not buried, and the two substrates are subjected to a heat treatment to unify the two substrates;
- and a sixth step in which the other main surface of said first silicon single crystal substrate is ground and polished to a thickness necessary for an SOI layer.
3 more elements
Dependencies are inferred from the claim text.