Process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers

Abstract

A process for enhancing the performance of resist polymers in lithographic processes for device fabrication is disclosed. The resist polymers contain acid labile functional groups. When these functional groups are removed and replaced by hydrogen, the polymer becomes more soluble in the aqueous base developer solutions used in lithographic processes. A portion of the acid-labile functional groups are cleaved from the polymer to obtain a resist polymer with increased sensitivity, improved adhesion, and reduced film shrinkage during post-exposure bake. The acid labile functional groups are cleaved by dissolving the polymer in a suitable solvent and subjecting the mixture to increased temperature until the desired number of acid labile functional groups are cleaved from the polymer. The polymer is then recovered from the mixture and employed as a resist in a lithographic process for device fabrication.

Dependencies are inferred from the claim text.