Phase shift mask and manufacturing method thereof and exposure method using phase shift mask

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of 36% to 97% argon and oxygen of the remaining percent by volume, using a target of chromium.

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of 48% to 90% argon, 1% to 39% oxygen and 6% to 14% nitrogen by volume, using a target of chromium.

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of 82% to 87% argon and nitrogen monoxide of the remaining percent by volume, using a target of chromium.

A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of 78% to 88% argon, 2% to 13% oxygen, 8% to 10% methane and nitrogen of the remaining percent by volume, using a target of chromium.

A blank for a phase shift mask including a substrate transmitting exposure light and a phase shifter film formed on a main surface of the substrate, wherein

• in said phase shifter film the phase of exposure light transmitted through said blank is converted by 180.degree. with respect to the phase of exposure light transmitted only through said substrate, the transmittance is in the range from 5% to 40%, and said phase shifter film is formed of a single material selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide and a nitride oxide film of metal silicide.

A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.

A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.

A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of 36% to 97% argon and oxygen of the remaining percent by volume, using a target of chromium.

A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of 48% to 90% argon, 1% to 39% oxygen and 6% to 14% nitrogen, using a target of chromium.

A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of 82% to 87% argon and nitrogen monoxide of the remaining percent by volume, using a target of chromium.

A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180.degree. and having a transmittance in the range from 5% to 40%, wherein

• a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of 78% to 88% argon, 2% to 13% oxygen, 8% to 10% methane and nitrogen of the remaining percent by volume, using a target of chromium.

In a phase shift mask including a substrate transmitting exposure light and a phase shift pattern formed on a main surface of the substrate, said phase shift pattern having a first light transmission portion exposing said substrate and a second light transmission portion having a phase of transmitted exposure light converted by 180.degree. with respect to the phase of exposure light transmitted through said first light transmission portion, having a transmittance in the range from 5% to 40% and being formed of a single film selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide and a nitride oxide film of metal silicide,

• a method of detecting a remaining defect (black defect) or a pin hole defect (white defect) in said second light transmission portion, wherein
• said phase shift mask is detected for a defect according to a chip comparison method using a mercury lamp as a light source.

In a phase shift mask including a substrate transmitting exposure light and a phase shift pattern formed on a main surface of the substrate, said phase shift pattern having a first light transmission portion exposing the substrate, and a second light transmission portion having a phase of transmitted exposure light having a phase converted by 180.degree. with respect to the phase of exposure light transmitted through said first light transmission portion, having a transmittance in the range from 5% to 40%, and formed of a single film selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide, and a nitride oxide film of metal silicide,

• a method of repairing a remaining defect (black defect) generated in said second transmission portion, wherein
• the remaining defect (black defect) generated in said second light transmission portion is removed by sputter-etching using a YAG laser or FIB.

In a phase shift mask including a substrate transmitting exposure light and a phase shift pattern formed on a main surface of the substrate, said phase shift pattern having a first light transmission portion exposing the substrate and a second light transmission portion having a phase of transmitted exposure light converted by 180.degree. with respect to the phase of exposure light transmitted through said first light transmission portion, having a transmittance in the range from 5% to 40%, and being formed of a single film selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide and a nitride oxide film of metal silicide,

• a method of repairing a pin hole defect (white defect) generated in said second light transmission portion, wherein
• the pin hole defect (white defect) generated in said second light transmission portion is filled by deposition of a carbon-based film according to an FIB assisted deposition method.