Integrated circuits formed in radiation sensitive material and method of forming same

A complementary transistor structure comprising:

• a first undoped layer of radiation sensitive polyimide formed over a substrate;
• an n-doped well region formed in said first undoped layer;
• a p-doped well region formed in said first undoped layer and spaced from said n-doped well region;
• a second undoped layer of radiation sensitive polyimide formed over said first undoped layer of radiation sensitive material;
• first and second p-doped source/drain regions formed by irradiation in said second undoped layer and extending into at least a top portion of said n-doped well region;
• a first gate region formed by irradiation in a top portion of said second undoped layer between said first and second source/drain p-doped regions such that a first channel region is formed in said n-doped well region beneath said first gate region;
• first and second n-doped source/drain regions formed by irradiation in said second undoped layer and extending into at least a top portion of said p-doped well region;
• and
• a second gate region formed by irradiation in a top portion of said second undoped layer between said first and second n-doped source/drain regions such that a first channel region is formed in said p-doped well region beneath said second gate region.

A transistor device comprising:

• a first layer of radiation sensitive polybenzimidazole (PBI) material formed over a substrate;
• a non-conductive layer of radiation sensitive PBI material formed over said first layer of radiation sensitive material;
• a first conductive source/drain region formed by irradiation in said non-conductive layer and extending to a top portion of said first layer;
• a second conductive source/drain regions formed by irradiation in said non-conductive layer and extending to a top portion of said first layer, said first source/drain region spaced from said second source/drain region;
• and
• a gate region formed by irradiation in a top portion of said non-conductive layer between said first source/drain region and second source/drain region such that a first channel region is formed in said first layer beneath said gate region and insulated therefrom.

A field effect transistor device comprising:

• a source region formed by irradiation of a first polarity doped radiation sensitive polymer material, said radiation sensitive polymer selected from the group consisting of polyimide and polybenzimidazole;
• a drain region formed by irradiation of said first polarity doped radiation sensitive polymer material;
• a channel region disposed between said source region and said drain region, said channel comprising a polymer material;
• and
• a conductive gate disposed over said channel region, said conductive gate region being formed by irradiation of a radiation sensitive polymer material;
• whereby said conductive gate is operable to actuate a current between said source region and said drain region upon application of a specified voltage.