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US 5,689,130 AGranted
Vertical semiconductor device with ground surface providing a reduced ON resistance
AssigneeNippondenso Co., Ltd.
InventorsYoshifumi Okabe, Masami Yamaoka, Akira Kuroyanagi
Life of this patent
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Abstract
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
Claims51
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface, wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element, and
- wherein a surface roughness of said concavo-convex irregularities is in a range between 0.2-0.6 .mu.m so that a contact resistance between said N-type semiconductor substrate and said second electrode is reduced.
4 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities, and a concentration of said arsenic being in a range between 7.times.10.sup.18 -1.times.10.sup.21 cm.sup.-3 ;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on and directly contacting said ground surface so as to obtain ohmic contact with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- and
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m.
6 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m;
- and
- wherein a surface roughness of said ground surface is in a range between 0.2-0.6 .mu.m.
7 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m;
- and
- wherein a surface roughness of said ground surface is in a range between 0.3-0.6 .mu.m.
7 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface, wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a destruction strength of said semiconductor device is between 0.9 to 1.8 kg when a thickness from a top surface of said first electrode to said ground surface is 300-500 .mu.m, said destruction strength being defined as a maximum load before said semiconductor device is destroyed.
4 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m;
- wherein said second electrode includes a Ti layer;
- and
- wherein a surface roughness of said around surface is in a range between 0.3-0.6 .mu.m.
8 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface, wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a destruction strength of said semiconductor device is between 1.0-1.6 kg when a thickness from a top surface of said first electrode to said ground surface is 310-450 .mu.m, said destruction strength being defined as a maximum load before said semiconductor device is destroyed.
4 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer which contains arsenic as donor in such a manner that a concentration of said arsenic is selected to be between 7.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.21 cm.sup.-3, said N-type semiconductor substrate having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first metal electrode coupled to said semiconductor element;
- and
- a second metal electrode directly contacting said ground surface of said N-type semiconductor substrate, wherein an electric current flows between said first metal electrode and said second metal electrode during an ON-state of said semiconductor element;
- and
- wherein a thickness from a top surface of said first metal electrode to said ground surface is selected to be 200-450 .mu.m.
5 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities, and a concentration of said arsenic being in a range between 7.times.10.sup.18 -1.times.10.sup.21 cm.sup.-3 ;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m;
- and
- wherein a surface roughness of said ground surface is in a range between 0.2-0.6 .mu.m.
7 more elements
A semiconductor device which comprises:
- an N-type semiconductor substrate consisting only of a single layer including arsenic as an impurity and having a ground surface formed on one surface thereof, said ground surface having concavo-convex irregularities, and a concentration of said arsenic being in a range between 7.times.10.sup.18 -1.times.10.sup.21 cm.sup.-3 ;
- an epitaxial layer grown on another surface other than said one surface of said N-type semiconductor substrate;
- a semiconductor element formed in said epitaxial layer;
- a first electrode coupled to said semiconductor element;
- and
- a second electrode formed on said ground surface and ohmically-contacted with said N-type semiconductor substrate through said ground surface;
- wherein an electric current flows between said first electrode and said second electrode during an ON-state of said semiconductor element;
- wherein a thickness from a top surface of said first electrode to said ground surface is 200-450 .mu.m;
- and
- wherein a surface roughness of said ground surface is in a range between 0.3-0.6 .mu.m.
7 more elements
Dependencies are inferred from the claim text.