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US 5,689,124 AGranted
Semiconductor device
AssigneeNippon Steel Corporation
InventorsYoji Morikawa, Takashi Aigo
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a silicon substrate, at least one compound semiconductor layer formed on the silicon substrate and including a GaAs semiconductor layer for serving as a source/drain regions of at least one field-effect transistor (FET), an insulating layer selectively formed on at least one compound semiconductor layer; and first, second and third electrodes each having a first portion, formed on the GaAs semiconductor layer, and serving as one of gate/source/drain electrodes, respectively, of at least one FET, at least one of the first, second and third electrodes having a second portion formed on the insulating layer.
Claims25
A semiconductor device comprising:
- a main substrate including a semiconductor substrate, a compound semiconductor layer, which is formed on said semiconductor substrate and having a composition different from said semiconductor substrate, and an interfacial conductive layer formed in a hetero junction interface between said semiconductor substrate and said compound semiconductor layer;
- and
- a transistor element formed on said main substrate;
- wherein:
- equations (1) and/or (2) below are satisfied:
- 1 .mu.m.ltoreq.X.ltoreq.T (1)
- 1 .mu.m.ltoreq.Y.ltoreq.T (2)
- where X and Y are lengths of portions of source and drain electrodes of said transistor element which are in contact with said compound semiconductor layer along a running direction of carriers respectively, and T is a shortest distance from said source and drain electrodes to said interfacial conductor layer.
5 more elements
A semiconductor device comprising:
- a main substrate including a first semiconductor layer, a second semiconductor layer deposited on said first semiconductor layer and a conductive layer generated by diffusion of atoms included in said first semiconductor layer, as impurities into a second semiconductor side of an interface between said first and second semiconductor layers;
- an element formed on said main substrate and having electrodes, wiring and bonding pads;
- and
- a high-resistance region having higher resistance than said conductive layer and being formed on said first semiconductor layer for dividing a first portion including at least one of the electrodes, the wiring and the bonding pads of said element from a second portion including the other of the electrodes, the wiring and the bonding pads of said element, thereby isolating said conductive layer between the first and second portions.
1 more element
A semiconductor device comprising:
- a main substrate including a first semiconductor layer, a second semiconductor layer deposited on said first semiconductor layer and a conductive layer generated by diffusion of atoms included in said first semiconductor layer, as impurities into a second semiconductor side of an interface between said first and second semiconductor layers;
- a plurality of elements formed on said main substrate and having electrodes, wiring and bonding pads;
- and
- a high resistance region having higher resistance than said conductive layer and being formed on said first semiconductor layer for dividing a first portion including at least two of the adjacent electrodes, the wiring and the bonding pads of said plurality of elements, which are electrically connected to each other and have the same potential, from a second portion including the other of the electrodes, the wiring and the bonding pads of said plurality of elements, thereby isolating said conductive layer between the first and second portions.
1 more element
A semiconductor device comprising:
- a silicon substrate;
- at least one compound semiconductor layer formed on said silicon substrate and including a GaAs semiconductor layer for serving as source/drain regions of at least one field-effect transistor (FET);
- an insulating layer selectively formed on said at least one compound semiconductor layer;
- and
- first, second and third electrodes, each having a first portion formed on said GaAs semiconductor layer, and serving as one of gate/source/drain electrodes, respectively, of said at least one FET, at least one of said first, second and third electrodes having a second portion formed on said insulating layer;
- and
- wherein the second portion of said at least one of said first, second and third electrodes serves as a bonding pad.
4 more elements
A semiconductor device comprising:
- a silicon substrate;
- at least one compound semiconductor layer formed on said silicon substrate and including a GaAs semiconductor layer for serving as source/drain regions of at least one field-effect transistor (FET);
- an insulating layer selectively formed on said at least one compound semiconductor layer;
- and
- first, second and third electrodes, each having a first portion formed on said GaAs semiconductor layer, and serving as one of gate/source/drain electrodes, respectively, of said at least one FET, at least one of said first, second and third electrodes having a second portion formed on said insulating layer;
- and
- wherein each of said first, second and third electrodes has the second portion formed on said insulating layer.
4 more elements
Dependencies are inferred from the claim text.