InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor
AssigneeLucent Technologies Inc.
InventorS. Chandrasekhar
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Abstract
The present invention relates to a monolithic integrated demultiplexing photoreceiver that is formed on a semi-insulating InP substrate. A frequency routing device is formed on the substrate and includes a first plurality of In/InGaAs semiconductor layers. At least one p-i-n photodiode is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another.
Claims14
A monolithic integrated demultiplexing photoreceiver comprising:
- a semi-insulating InP substrate;
- a frequency routing device formed on said substrate including a first plurality of InP/InGaAs semiconductor layers;
- at least one p-i-n photodiode formed on said substrate including a second plurality of InP/InGaAs semiconductor layers;
- at least one single heterostructure bipolar transistor formed on said substrate including a third plurality of InP/InGaAs semiconductor layers, at least two layers of said first, second, and third plurality of layers being substantially identical to one another.
Dependencies are inferred from the claim text.