Method of manufacturing a silicon-type charge transporting material
AssigneeDow Corning Asia, Ltd.
InventorsNobuo Kushibiki, Kikuko Takeuchi
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AssigneeDow Corning Asia, Ltd.
InventorsNobuo Kushibiki, Kikuko Takeuchi
Estimating the term…
A method of manufacturing charge transporting materials which impart a charge transporting property to a polysiloxane resin, and which is soluble in the resin. The charge transporting material is an aromatic substituted tertiary amine with a plurality of aromatic groups, and a silyl group introduced via a hydrocarbon group, into at least one of the aromatic groups. The method is characterized by using an unsaturated aliphatic group bonded to an aromatic group which makes up the silicon-type charge transporting compound, or using a newly bonded unsaturated aliphatic group which is bonded to a silane in which the substituent for silicon is hydrogen or a hydrolyzable group. This is conducted in the presence of a platinum compound as catalyst by means of hydrosilylation. The silicon-type charge transporting material is then brought into contact with an adsorbent for the platinum compound, causing the platinum compound to be adsorbed onto the adsorbent. The platinum compound is removed along with the adsorbent, so that the concentration of residual platinum compound is less than 10 ppm.
A method of manufacturing a silicon-type charge transporting material of a formula A--R.sup.1 SiR.sup.2.sub.3-n Q.sub.n !.sub.p wherein A is an aromatic substituted tertiary amine having a plurality of aromatic groups and A represents an organic group derived from a compound having charge transporting properties and an ionization potential within the range of 4.5-6.2 eV;
A method of manufacturing a silicon-type charge transporting material A--R.sup.1 SiR.sup.2.sub.3-n Q.sub.n !.sub.p wherein A is an aromatic substituted tertiary amine with a plurality of aromatic groups and wherein A is an organic group derived from a compound having charge transporting properties and an ionization potential within the range of 4.5-6.2 eV;
Dependencies are inferred from the claim text.