Method for plasma hardening of patterned photoresist layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Shiung Tsai, Sung-Mu Hsu
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Abstract
A method for plasma hardening a patterned photoresist layer. There is first provided a semiconductor substrate which has formed upon its surface a patterned photoresist layer. The patterned photoresist layer is then exposed to a hydrogen containing plasma for a time sufficient to harden the patterned photoresist layer against a Reactive Ion Etch (RIE) etch plasma to which the patterned photoresist layer is later exposed. A blanket layer residing beneath the plasma hardened photoresist layer may then be patterned through the Reactive Ion Etch (RIE) etch plasma without softening, erosion and/or consumption of the plasma hardened patterned photoresist layer.
Claims19
A method for plasma hardening a patterned photoresist layer comprising:
- providing a semiconductor substrate;
- forming over the semiconductor substrate a patterned photoresist layer;
- and
- treating the patterned photoresist layer with a helium-hydrogen plasma, without baking the patterned photoresist layer, to form from the patterned photoresist layer a plasma hardened patterned photoresist layer.
A method for patterning a blanket layer within an integrated circuit comprising:
- providing a semiconductor substrate;
- forming over the semiconductor substrate a blanket layer;
- forming upon the blanket layer a patterned photoresist layer;
- exposing the patterned photoresist layer to a helium-hydrogen plasma, without baking the patterned photoresist layer, to form from the patterned photoresist layer a plasma hardened patterned photoresist layer;
- and
- etching through a Reactive Ion Etch (RIE) etch plasma portions of the blanket layer exposed through the plasma hardened patterned photoresist layer to form a patterned layer.
A method for patterning a blanket aluminum containing conductor layer within an integrated circuit comprising:
- providing a semiconductor substrate;
- forming over the semiconductor substrate a blanket aluminum containing conductor layer;
- forming upon the blanket aluminum containing conductor layer a patterned photoresist layer;
- exposing the patterned photoresist layer to a helium-hydrogen plasma, without baking the patterned photoresist layer, to form from the patterned photoresist layer a plasma hardened patterned photoresist layer;
- and
- etching through a Reactive Ion Etch (RIE) etch plasma portions of the blanket aluminum containing conductor layer exposed through the patterned photoresist layer to form a patterned aluminum containing conductor layer.
Dependencies are inferred from the claim text.