US 5,688,712 A · Process for producing a semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate having a memory cell area and a circuit area surrounding the memory cell area with a boundary area interposed therebetween. A first conductive layer covers the memory cell area and extends onto the boundary area. A first insulating layer covers the surrounding circuit area and part of the extended portion of the first conductive layer. A second insulating layer covering the first insulating layer and the first conductive layer. A throughhole is formed through the first and second insulating layers. A second conductive layer is electrically connected with another conductive layer via the throughhole and extends from the memory cell area to the surrounding circuit area. The process of producing the semiconductor device is also disclosed.

Claims8

Dependent claims

A process of producing a semiconductor device, said process comprising the steps of:

defining a first area and a second area with a boundary area therebetween on a semiconductor substrate;
forming a first electronic element on the first and second areas;
forming a second electronic element only on the first area;
forming a first conductive layer extending from the first area to the boundary area;
forming a first insulating layer entirely on the substrate;
removing the portion of the first insulating layer that covers the first area, and thereby, exposing the first conductive layer;
forming a second insulating layer entirely on the substrate;
selectively, removing the first and second insulating layers to form a throughhole;
and
forming a second conductive layer extending from the first area to the second area.

7 more elements

Dependencies are inferred from the claim text.

Process for producing a semiconductor device

Life of this patent

Process for producing a semiconductor device

Life of this patent

Abstract

Claims8