Method of manufacturing a gate structure for a metal semiconductor field effect transistor
AssigneeMotorola, Inc.
InventorsLawrence S. Klingbeil, Jr., Marino J. Martinez
Life of this patent
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Abstract
A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory contact to the substrate (11), and the source and drain regions (26) are self-aligned to the gate structure (19). Semiconductor devices manufactured using methods in accordance with the present invention are observed to have a higher breakdown voltage and a higher transconductance, among other improved electrical performance characteristics.
Claims19
A method of manufacturing a semiconductor device, the method comprising the steps of:
- providing a substrate;
- implanting ions into the substrate to create a channel region in the substrate;
- providing a dielectric layer comprised of a metal on the substrate after implanting the ions;
- removing a portion of the dielectric layer to expose a portion of the substrate;
- and
- providing a gate layer on the dielectric layer and over the portion of the substrate, wherein the step of providing the gate layer includes providing the gate layer on the dielectric layer before providing a different layer on the dielectric layer.
A method of forming a semiconductor device, the method comprising the steps of:
- providing a substrate;
- disposing a dielectric layer having a metal over the substrate;
- and
- disposing an electrically conductive material on the dielectric layer prior to disposing a different material on the dielectric layer.
A method of manufacturing a semiconductor device, the method comprising the steps of:
- providing a substrate;
- implanting a channel region into the substrate;
- providing an aluminum nitride layer on the substrate and over the channel region;
- exposing a portion of the substrate by removing a portion of the aluminum nitride layer;
- providing a gate layer physically contacting the aluminum nitride layer and the portion of the substrate after forming the channel region;
- forming a gate structure from the gate layer;
- and
- removing the aluminum nitride layer from the portion of the substrate.
A method of manufacturing a semiconductor device, the method comprising the steps of:
- providing a substrate:
- implanting ions into the substrate to create a channel region in the substrate;
- providing a dielectric layer comprised of a metal on the substrate after implanting the ions, wherein the step of providing the dielectric layer includes providing the dielectric layer with a thickness of less than approximately five hundred angstroms;
- removing a portion of the dielectric layer to expose a portion of the substrate:
- and
- providing a gate layer on the dielectric layer and over the portion of the substrate.
Dependencies are inferred from the claim text.