Phase shift layer-containing photomask, and its production and correction

A process for correcting a phase shift layer-containing photomask, characterized by comprising the steps of:

• coating a starting material for spin-on-glass uniformly on a photomask containing a phase shift layer built up of a substrate, a light-shielding pattern and a phase shifter pattern, said phase shifter pattern being partly defective;
• heat-treating the photomask with the starting material for spin-on-glass coated thereon;
• irradiating the defective portion of the phase shifter pattern with the starting material for spin-on-glass coated thereon with energy beams commensurate to the geometry of said defective portion;
• developing the post-irradiation substrate with a solvent to wash off an excessive spin-on-glass portion other than the spin-on-glass layer irradiated with energy beams, and
• baking the post-development substrate.

A process for producing a phase shift layer-containing photomask including a light-shielding pattern and a phase shifter for making a phase difference between transparent regions isolated by a light-shielding region from each other and located adjacent to each other, characterized in that said phase shifter is formed by the steps of:

• forming an ionizing radiation resist pattern on a portion commensurate to said phase shifter pattern on the surface of a substrate on which at least a light-shielding pattern and a transparent film of uniform thickness are provided, using an ionizing radiation resist;
• coating a photoresist all over the surface of the substrate with the ionizing radiation resist pattern formed thereon and full-exposing the photoresist to light from the back side of the substrate, thereby to form a photoresist pattern on at least a portion commensurate to the light-shielding pattern;
• and
• dry-etching the transparent film of uniform thickness using the photoresist pattern or the photoresist pattern plus the ionizing radiation resist pattern as a mask to form a phase shifter pattern.