Processes for fabricating device layers with ultrafine features

A method for fabricating a device layer with ultrafine features comprising:

• depositing a first device layer to be patterned above a substrate;
• depositing a photoresist layer above said first device layer;
• providing a reticle, said reticle having a first reticle layer, said first reticle layer having a first phase region, a second phase region, and a third phase region, wherein said second phase region is disposed between said first and third phase regions, said first and third phase regions having a first phase and said second phase region having a second phase, wherein said first and second phases indicate an amount by which incident radiation is shifted through said reticle, and wherein the boundaries between said first phase region and said second phase region form a first phase-edge and the boundaries between said second phase region and said third phase region form a second phase edge;
• and
• exposing said photoresist layer to radiation through said reticle using a stepper, wherein the critical dimensions of said device layer being fabricated are controlled by adjusting the distance between said first phase-edge and said second phase edge.

A method for fabricating a device layer with ultrafine features comprising:

• depositing a first device layer to be patterned above a substrate;
• depositing a photoresist layer above said first device layer;
• providing a reticle, said reticle having a first reticle layer, said first reticle layer having a first phase region and a second phase region, said first phase region having a first phase and said second phase region having a second phase, wherein said first and second phases indicate an amount by which incident radiation is shifted through said reticle;
• said reticle having a second reticle layer, said second reticle layer disposed above said first reticle layer proximate to the location wherein said first phase region transitions to said second phase region of said first reticle layer;
• exposing said photoresist layer to radiation through said reticle using a stepper;
• adjusting the partial coherence of said stepper, wherein said step of adjusting the partial coherence of said stepper controls the critical dimensions of said device layer being fabricated, and wherein the critical dimensions of said device layer being fabricated are decreased when the partial coherence of said stepper is adjusted to less than 0.6.