Etching method, method of producing a semiconductor device, and etchant therefor
AssigneeCanon Kabushiki Kaisha
InventorsHirofumi Ichinose, Satoshi Shinkura, Akio Hasebe, Tsutomu Murakami
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Abstract
A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
Claims22
An etching method comprising the steps of:
- a) disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
A method of producing a semiconductor device, comprising the step of:
- disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
Dependencies are inferred from the claim text.