Apparatus for producing a silicon single crystal by a float-zone method
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMasanori Kimura, Hirotoshi Yamagishi
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Abstract
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described. The growing single crystal ingot is post-heated by a heat reflector near the molten zone.
Claims9
An apparatus for producing a silicon single crystal by a floating-zone method from a polysilicon rod having an average grain length of 10 to 1000 .mu.m, said apparatus comprising:
- means for heating a portion of the polysilicon rod to form a molten zone;
- reflector means disposed around the silicon crystal ingot being grown and located near the molten zone for post-heating the growing silicon single crystal ingot;
- means for applying a magnetic field of 300 to 1000 gauss to the molten zone;
- and
- means for passing the molten zone through the length of the polysilicon rod, thereby converting the polysilicon rod into a silicon single crystal ingot through a one-pass zoning of the floating zone method.
Dependencies are inferred from the claim text.