US 5,687,382 AGranted

High speed, reduced power memory system implemented according to access frequency

AssigneeHitachi America, Ltd.

InventorsHirotsugu Kojima, Katsuro Sasaki

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Abstract

A memory system including a first memory area (MEM-A) implemented using memory units including low threshold voltage transistors powered by a low supply voltage source, and a second memory area (MEM-B) implemented using memory units including higher threshold voltage cells powered by a higher supply voltage source. The first memory area, MEM-A, is designated to contain frequently accessed variables, with less frequently accessed variables designated for storage in the second memory area, MEM-B. The most frequently accessed variables stored in MEM-A provide for fast access at a low power per access power dissipation level due to the lower supply voltage and lower threshold voltage design. Alternatively, the less frequently accessed variables stored in MEM-B require a high power per access, but negligible leakage current during static steady state conditions.

Claims9

Dependent claims

A reduced power combinational memory system for storing data and instructions for use by a host processor comprising:

a first memory element, said first memory element including a first plurality of memory units for storing frequently accessed ones of said data and instructions, each one of said first plurality of memory units including low power transistors having a first threshold voltage for designating a first and second state of a respective one of said first memory units, said low power transistors powered by a first power supply voltage, said low power transistors providing reduced power consumption during dynamic state but consuming power during steady state due to leakage current at the first threshold;
and
a second memory element located separate from said first memory element, said second memory element including a second plurality of memory units for storing less frequently accessed ones of said data and instructions, each one of said second plurality of memory units including high power transistors having a second threshold voltage which is higher than said first threshold voltage for designating between said first and said second state, said high powered transistors power by a second power supply voltage which is greater than said first supply voltage, said high power transistors providing high speed dynamic performance;
said low power transistors maintaining high memory speed while reducing dynamic power consumption during access to said first memory element by said host processor, said high power transistors maintaining high memory speed while reducing static power consumption during non-access periods with said second memory unit by said host processor;
said first plurality of memory units sized to store the most frequently accessed data and instructions in an executable program;
said second plurality of memory units sized to store all lesser frequently accessed data and instructions in said executable program;
means responsive to memory control signals for selectably loading a particular data or instruction into one of said first or said second memory element of said memory system according to predicted frequency of access of each data and instruction;
said combinational memory system maintaining speed while providing optimized power consumption at both static and dynamic memory states.

5 more elements

A method for minimizing static and dynamic power dissipation in a memory system during the execution by a host processor of a program having instructions and data stored in said memory system, the method comprising the steps of:

providing a first memory area connected to said host processor, said first memory area comprising a first plurality of low power memory units including first threshold voltage level transistors powered by a first voltage source, said first threshold voltage level transistors maintaining high memory speed while reducing dynamic power consumption during access to said first memory area by said host processor, said first plurality of memory units sized to store the most frequently accessed data and instructions in an executable program;
providing a second memory area, separate from said first memory element, connected to said host processor, said second memory area comprising a second plurality of high power memory units including second threshold voltage level transistors powered by a second voltage source, said second threshold voltage being higher than said first threshold voltage and said second voltage source being a higher voltage source than said first voltage source, said second threshold voltage level transistors maintaining high memory speed while reducing static power consumption during non-access periods to said second memory area by said host processor, said second plurality of memory units sized to store all lesser frequently accessed data and instructions in said executable program;
identifying more frequently accessed ones of said instructions and data which are to be accessed frequently during the execution of said program by said host processor;
storing said frequently accessed ones of said instructions and data in said first memory area;
identifying less frequently accessed ones of said instructions and data which are to be accessed less frequently during the execution of said program by said host processor than said more frequently accessed ones;
and
storing said less frequently accessed ones of said instructions and data in said second memory area;
power dissipation during combined static and dynamic operation of said memory system being reduced without affecting effective memory speed by storing frequently accessed data and instructions to said first memory area and performed at high speed, and by storing less frequently accessed data and instructions to said second memory area with low power dissipation.

5 more elements

A reduced power digital signal processor comprising:

a central processing unit for executing program instructions;
a storage element for storing data and said program instructions, said storage element including:
a first memory area having a first plurality of memory units for storing frequently accessed ones of said data and program instructions, each of said first memory units including low power transistors having a first threshold voltage for designating a first and second state of a respective first memory unit, said low power transistors powered by a first power supply voltage, and
a second memory area having a second plurality of memory units for storing less frequently accessed ones of said data and instructions, each of said second memory units including high power transistors having a second threshold voltage which is higher than said first threshold voltage for designating between said first and said second state, said high powered transistors powered by a second power supply voltage which is greater than said first supply voltage, said first memory area dissipating less power during accesses by said digital signal processor than said second memory area, and said second memory area dissipating less power during static operations than said first memory area;
said second plurality of memory units being physically separate from and a greater number than said first plurality of memory units;
first address, data, and control busses coupled between said first memory area and said central processor unit for transferring data between said first memory area and said central processor unit;
and
second longer address, data, and control busses coupled between said second memory area and said central processor unit for transferring data between said second memory area and said central processor unit.

5 more elements

Dependencies are inferred from the claim text.