Back to results
US 5,687,185 AGranted
Laser cathode-ray tube
AssigneePrincipia Optics, Inc.
InventorsVladimir I. Kozlovsky, Boris M. Lavrushin
Life of this patent
Estimating the term…
Abstract
A laser cathode-ray tube having an electron beam source, a means for its control, and a laser target containing a supporting substrate, a cavity resonator formed by two mirrors and multilayer semiconductor structure having active and passive strained layers, whose difference in lattice parameters in a free state is up to 10% or more and which have coherent boundaries between each other in the structure.
Claims37
A semiconductor laser comprising:
- a laser target;
- a source of electron beam and a means for position and time control of said electron beam on said laser target to generate a laser beam therefrom, characterized in that said target comprises:
- a pair of mirrors, at least one of which is at least partially transparent for said electron beam, forming a cavity resonator at the optical wavelength of said light beam, said control means making said electron beam incident on said electron-transparent mirror;
- a semiconductor structure between said mirrors, said semiconductor structure comprising at least one active strained element and at least one passive strained element having wider bandgap than said active strained element, said strained elements differing in crystal lattice parameters in the free state by 0.1% or more;
- and,
- a substrate for supporting said cavity resonator, said supporting substrate positioned adjacent to said mirror being opposite to said electron-transparent mirror;
- the proportions of said strained elements of said semiconductor structure being mutually adapted so that the boundaries between said strained elements are coherent;
- the proportions of said semiconductor structure and the energy of said electron beam being mutually adapted so that the part of the electron energy absorbed in said semiconductor structure is not less than 50%.
5 more elements
A laser cathode-ray tube comprising:
- a vacuable tube;
- a electron beam source including cathode, said source located near one end of said tube;
- a laser target located at other end of said tube;
- a means for focusing and scanning of said electron beam on said target to generate a light beam therefrom essentially parallel to the direction of said electron beam, said target comprising:
- a transparent substrate sealed to said other end of said tube;
- a partially transparent first mirror on said substrate;
- a multilayer semiconductor structure on said first mirror, said structure consisting of alternating passive and active strained layers made of II-VI-compounds and its solid solutions, said active layers having narrower bandgap than said passive layers, said strained layers differing in crystal lattice parameters in the free state by 0.1% or more, the thicknesses of said strained elements of said structure being mutually adapted so that the boundaries between said strained elements are coherent;
- and a highly reflecting second mirror on said structure, said mirrors forming a cavity resonator therebetween;
- a means for applying to said structure a positive potential relative to said cathode of said source;
- said electron beam being focused and incident on said second mirror so that electrons penetrate through said second mirror into said structure, thereby to generate said light beam which emanates from said active layers of said structure and through said substrate in essentially the same direction as said electron beam;
- and,
- the thicknesses of said semiconductor structure and the energy of said electron beam being mutually adapted so that the part of the electron energy absorbed in said semiconductor structure is not less than 50%.
9 more elements
A laser cathode-ray tube comprising:
- a vacuable tube;
- a electron beam source including cathode, said source located near one end of said tube;
- a laser target located at other end of said tube;
- a means for focusing and scanning of said electron beam on said target to generate a light beam therefrom essentially parallel to the direction of said electron beam, said target comprising:
- a transparent substrate sealed to said other end of said tube;
- a partially transparent first mirror on said substrate;
- a multilayer semiconductor structure on said first mirror, said structure consisting of alternating passive and active strained layers made of III-V-compounds and its solid solutions, said active layers having narrower bandgap than said passive layers, said strained layers differing in crystal lattice parameters in the free state by 0.1% or more, the thicknesses of said strained elements of said structure being mutually adapted so that the boundaries between said strained elements are coherent;
- and a highly reflecting second mirror on said structure, said mirrors forming a cavity resonator therebetween;
- a means for applying to said structure a positive potential relative to said cathode of said source;
- said electron beam being focused and incident on said second mirror so that electrons penetrate through said second mirror into said structure, thereby to generate said light beam which emanates from said active layers of said structure and through said substrate in essentially the same direction as said electron beam;
- and,
- the thicknesses of said semiconductor structure and the energy of said electron beam being mutually adapted so that the part of the electron energy absorbed in said semiconductor structure is not less than 50%.
9 more elements
Dependencies are inferred from the claim text.