Power supply voltage boosting circuit of semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hyeong Lee, Yong-Sik Seok
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AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hyeong Lee, Yong-Sik Seok
Estimating the term…
An active power supply voltage boosting circuit for a semiconductor memory device according to the present invention causes operation of the active cycle boosted voltage generating circuit to elevate the level of the boosted power supply voltage V.sub.PP when the detected level of the boosted power supply voltage V.sub.PP is lower than a target voltage level. Thus, the boosted power supply voltage V.sub.PP can be stably maintained to the target voltage level. When the boosted power supply voltage V.sub.PP becomes higher than the target voltage level, generation of the boosted power supply voltage V.sub.PP is stopped, and as a result, unwanted consumption of the electrical current and also the damage to the semiconductor memory device by high voltage can be prevented.
A power supply voltage boosting circuit of a semiconductor memory device comprising:
A power supply voltage boosting circuit of a semiconductor memory device comprising:
A power supply voltage boosting circuit of a semiconductor memory device comprising:
Dependencies are inferred from the claim text.