Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
AssigneeRohn Co., Ltd.
InventorsShang-De Chang, Jia-Hwang Chang, Edwin Chow
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Abstract
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.
Claims3
A method of determining whether an electrically erasable and programmable device has been over-erased, wherein the device is of the type having a source, a drain, a control gate, and a floating gate positioned between the control gate and the source and drain, the method comprising the steps of:
- (a) applying a first voltage to the drain;
- (b) applying a second voltage to the source, the second voltage being lower that the first voltage, and selected to bias an over-erased devices into a non-conducting state;
- (c) separately applying a range of potentials to the control gate;
- and
- (d) determining whether current is flowing from the drain to the source during application of the range of potentials to the control gate, which, when the potential of the control gate is within the range, is an indication that the device has been over-erased.
Dependencies are inferred from the claim text.