Semiconductor switch including a pre-driver with a capacitively isolated power supply
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsGourab Majumdar, Shinji Hatae, Masayuki Koura
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsGourab Majumdar, Shinji Hatae, Masayuki Koura
Estimating the term…
When an IGBT element (9) is turned off and an IGBT element (19) is turned on, capacitors (1, 2) are charged by a current successively passing through the capacitor (1), a resistive element (4), a diode (5), the capacitor (2) and an intermediate wire (32) from a high-potential dc bus (30). At the same time, a capacitor (11) is discharged by a current successively passing through a diode (17), a resistive element (16) and the capacitor (11) from a low-potential dc bus (31) to flow to the intermediate wire (32). When the IGBT element (9) is turned on and the IGBT element (19) is turned off, on the other hand, the capacitors (11, 12) are charged and the capacitor (1) is discharged. The above is so repeated as to maintain source voltages of driving circuits (8, 18) at values exceeding constant levels. Thus, a power circuit for a driving circuit is formed by a simple circuit element.
A switching semiconductor device comprising:
A switching semiconductor device comprising first and second unit semiconductor devices being connected in series with each other,
Dependencies are inferred from the claim text.