Reference voltage generation circuit having compensation function for variations of temperature and supply voltage

A reference voltage generation circuit for a semiconductor memory device comprising:

• first reference voltage generation means for generating a first reference voltage, said first reference voltage having a positive response characteristic with respect to a temperature or a supply voltage;
• first start-up means for determining an initial condition of said first reference voltage generation means in response to the supply voltage to stabilize the operation of said first reference voltage generation means;
• second reference voltage generation means for generating a second reference voltage, said second reference voltage having a negative response characteristic with respect to the temperature or the supply voltage;
• second start-up means for determining an initial condition of said second reference voltage generation means in response to the supply voltage to stabilize the operation of said second reference voltage generation means;
• and
• voltage amplification means for compensating a target reference voltage for a variation in the temperature or the supply voltage in response to said first and second reference voltages from said first and second reference voltage generation means so that said target reference voltage can always be constant in level.

A reference voltage generation circuit for a semiconductor memory device comprising:

• reference voltage generation means for generating first and second reference voltages, said first and second reference voltages having the opposite response characteristics with respect to a variation in a temperature or a supply voltage, said reference voltage generation means including a reference voltage output terminal, a constant current source connected between a supply voltage source and said reference voltage output terminal, and a MOS transistor connected between said reference voltage output terminal and the ground voltage source;
• start-up means for determining an initial condition of said reference voltage generation means in response to the supply voltage to stabilize the operation of said reference voltage generation means;
• and
• voltage amplification means for compensating a target reference voltage for the variation in the temperature or the supply voltage in response to said first and second reference voltages from said reference voltage generation means so that said target reference voltage can always be constant in level.