Eutectic Cu-alloy wiring structure in a semiconductor device
AssigneeNEC Corporation
InventorKuniko Miyakawa
Life of this patent
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Abstract
In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form a eutectic Cu-alloy having a eutectic temperature of not higher than 850.degree. C. A Cu film is formed on the diffusion preventing film so as to fill up the wiring groove, so that Cu and the above mentioned element actually form the eutectic Cu-alloy having the eutectic temperature of not higher than 850.degree. C.
Claims9
A wiring structure in a semiconductor device having a connection hole in alignment with another connection hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of each said hole, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form an alloy having an eutectic temperature of not higher than 850.degree. C., and a Cu film formed on the diffusion preventing film and filling each said hole.
A wiring structure in a semiconductor device having a via hole and a wiring groove in alignment with the via hole, the wiring structure including a diffusion preventing film formed on the bottom and side walls of the via hole and on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu, and a Cu-alloy film formed on the diffusion preventing film and filling the via hole and the wiring groove, the Cu-alloy film being composed of Cu and another element which form an alloy having an eutectic temperature not higher than 850.degree. C.
Dependencies are inferred from the claim text.