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US 5,686,755 AGranted
LDMOS resurf high voltage transistor
AssigneeTexas Instruments Incorporated
InventorSatwinder Malhi
Life of this patent
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Abstract
A high voltage transistor includes a semiconductor-on-insulator (SOI) region in which a source and a channel are formed. A drain drift region is further formed partly in the SOI region and partly in the bulk silicon region beyond SOI and a gate is coupled to said SOI channel.
Claims4
A semiconductor device comprising:
- a substrate having a bulk substrate region and a SOI substrate region;
- and
- a high voltage transistor located partly within said bulk substrate region and partly within said SOI substrate region, wherein said high voltage transistor comprises:.
- a source region located within said SOI substrate region;
- a drift region located substantially in said bulk substrate region;
- a drain region located within said drift region;
- a channel region located within said SOI substrate region extending from said source region to said drift region;
- and
- a gate electrode extending over said channel region.
6 more elements
Dependencies are inferred from the claim text.