Three-terminal non-volatile ferroelectric/superconductor thin film field effect transistor

A non-volatile memory device, comprising:

• a base comprising a thin film superconductor layer having a high critical temperature, a thickness of at least 10 nm, and a top surface;
• a thin film ferroelectric layer epitaxially deposited on said superconductor top surface, said ferroelectric layer having a first and second polarization state;
• a gate electrode contacted to said ferroelectric layer;
• a source electrode contacted to said superconductor top surface on a first side of said ferroelectric layer;
• and
• a drain electrode contacted to said superconductor top surface on a second opposite side of said ferroelectric layer,
• wherein a channel region is formed in said superconductor layer under said ferroelectric layer and between said drain and source electrodes, said channel region having a resistivity that is modulated by said ferroelectric layer polarization states,
• wherein said ferroelectric layer being at a first polarization state causes said channel region to have a first resistivity, wherein said ferroelectric layer being at a second polarization state causes said channel region to have a second resistivity that is less than said first resistivity, wherein said ferroelectric layer retains its polarization state, and wherein said polarization state is switchable between said first and second polarization states in response to an external voltage pulse applied at said gate electrode.