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US 5,686,735 AGranted
Silicon-on-insulator (SOI) transistor
AssigneeSamsung Electronics Co., Ltd.
InventorJai-hoon Sim
Life of this patent
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Abstract
An SOI transistor whose source region and/or drain region have a heterostructure made up of at least two different semiconductor materials, to thereby prevent a bipolar-induced breakdown.
Claims2
A silicon-on-insulator (SOI) transistor comprising:
- a semiconductor substrate;
- an insulating layer formed on said substrate;
- a channel region comprised of a single layer of a first semiconductor material formed on said insulating layer, said first semiconductor material being Si;
- and
- first and second impurity regions respectively disposed on opposite sides of, and abutting with, said channel region, at least one of said first and second impurity regions being comprised of a heterostructure of at least two layers of second and third semiconductor materials successively formed on said insulating layer, said second and third semiconductor materials being Si and Si.sub.1-x Ge.sub.x, respectively and having different energy band gaps, said heterostructure being formed of a first layer of Si, a second layer of Si.sub.1-x Ge.sub.x formed on said first layer, and a third layer of Si formed on said second layer.
2 more elements
Dependencies are inferred from the claim text.