Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device including the step of forming a bump on each of first and second electrode terminals disposed on a surface of a semiconductor chip using a gold wire as a material of said bump, said gold wire being supplied through a capillary, and said bump forming step comprising the steps of:

• joining a gold ball onto said first electrode terminal located directly under said capillary so as to form a first bump, said gold ball being formed by melting an end portion of said gold wire using a torch electrode to provide a spark condition sufficient to melt said end portion of said gold wire;
• and
• moving said torch electrode around said capillary so as to enable to melt said end portion of said gold wire under a spark condition as same as said spark condition of said first bump, and then joining another gold ball onto said second electrode terminal so as to form a second bump, said gold ball being formed by melting said end portion of said gold wire under said spark condition.

A manufacturing method of a semiconductor device comprising:

• holding a semiconductor chip having a plurality of bumps on a surface thereof at another surface opposite to said surface by means of a semiconductor holder;
• and
• pressing each of said bumps against a corresponding one of electrodes for functional testing on a leveling stage for uniformity of height of each of said bumps, each of said electrodes being divided into two portions which are spaced apart from each other, and simultaneously performing a functional test of said semiconductor chip.

A manufacturing method of a semiconductor device which is joined to a circuit substrate in such a manner that a bump disposed on each of electrode terminals provided on said semiconductor device is connected to corresponding one of electrodes of said circuit substrate in which an electrical circuit is formed, said manufacturing method comprising the steps of:

• positioning said semiconductor device in relation to said circuit substrate in such a manner that each of said bumps is located above corresponding one of said electrodes of said circuit substrate respectively;
• and
• pressing said semiconductor device against said circuit substrate so as to transform an apex portion of each of said bumps, and thus adapting height of each of said bumps to actual height of corresponding one of said electrodes of said circuit substrate.