Method for fabricating defect-free compound semiconductor thin film on dielectric thin film
AssigneeElectronics and Telecommunications Research Institute
InventorsBun Lee, Mee-Young Yoon, Jong-Hyeob Baek
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Abstract
A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film containing a carbon impurity of a high concentration and made of AlGaAs series by an annealing at a vapor ambient, thereby rapidly growing a hetero-semiconductor thin film over a dielectric thin film made of Al.sub.2 O.sub.3 with no defect.
Claims8
A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film comprising the steps:
- growing a AlGaAs series thin film doped with carbon impurities of high concentration on a GaAs substrate;
- growing a hetero-compound semiconductor cap layer made of one of GaAs, InGaAs and InAs on the AlGaAs series thin film;
- and
- annealing the cap layer and the AlGaAs series thin film at a water vapor ambient so that the AlGaAs series thin film is oxidized to be the dielectric thin film with the cap layer functioning as a passage for the water vapor thereby forming a semiconductor on an insulator structure on the GaAs substrate.
A method for fabricating a defect-free compound semiconductor thin film on a dielectric film comprising the steps:
- growing a AlGaAs series thin film doped with carbon impurities of more than a 1.times.10.sup.18 cm.sup.13 concentration on the GaAs substrate;
- growing a hetero-compound semiconductor cap layer made of one of GaAs, InGaAs and InAs on the AlGaAs series thin film;
- and
- annealing the cap layer and the AlGaAs series thin film at a water vapor ambient so that the AlGaAs series thin film is oxidized to be the dielectric thin film with the cap layer functioning as a passage for the water vapor thereby forming a semiconductor on an insulator structure on the GaAs substrate.
Dependencies are inferred from the claim text.