Device isolation method for semiconductor device
AssigneeLG Semicon Co., Ltd.
InventorChang-Jae Lee
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Abstract
An improved device isolation method for a semiconductor device capable of independently and compatibly providing an isolation film in the interior of well and an isolation film between wells during a consistent process, so that latch-up characteristic can be improved even in a device requiring a design rule of below 0.5 .mu.m, which includes a first step which combines a second step which forms a device isolation film within a well and a third step which forms a device isolation film between wells, the second and third steps being compatible to each other during the same step.
Claims19
A device isolation method for a semiconductor device, comprising the steps of:
- a first step which forms a trench at a well boundary of a semiconductor substrate having an n-well and a p-well;
- a second step which forms a thermal oxide film, a silicon film, and a nitride film on the from surface, including the trench, of said substrate in order;
- a third step which selectively removes said nitride film of a field region;
- and
- a fourth step which develops an isolation film in the field region using a thermal oxidation.
A device isolation method for a semiconductor device, comprising the steps of:
- a first step which forms a trench at a well boundary of a semiconductor substrate having an n-well and a p-well;
- a second step which forms a thermal oxide film and a nitride film on the front surface, including said trench, of said substrate in order;
- a third step which selectively removes said nitride film of a field region;
- a fourth step which develops an isolation film in said field region through a first thermal oxidation;
- a fifth step which deposits a CVD silicon film and etches back it;
- and
- a sixth step which develops an isolation film in the field region through a second thermal oxidation.
A device isolation method for a semiconductor device, comprising the steps of:
- a first step which forms a trench at a well boundary of a semiconductor substrate having an n-well and a p-well;
- a second step which forms a thermal oxide film and a nitride film on the front surface, including the trench, of the substrate in order;
- a third step which selectively removes the nitride film in a field region;
- a fourth step which develops an isolation film in said field region through a thermal oxidation;
- and
- a fifth step which deposits a CVD insulation film and etches back it.
Dependencies are inferred from the claim text.