Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die

A method for fabricating an interconnect for establishing an electrical connection with a contact location on a semiconductor die comprising:

• providing a substrate;
• forming a projection on the substrate, said projection configured to penetrate into the contact location to a limited penetration depth
• etching a raised contact member on the substrate corresponding to the contact location on the die and including at least one projection;
• forming an insulating layer on the substrate and contact member;
• forming a silicon containing layer on the contact member;
• forming a metal layer on the silicon containing layer;
• forming a metal silicide layer on the contact member by reacting the silicon containing layer with the metal layer;
• and
• forming conductive traces in contact with the metal silicide layer.

A method for fabricating an interconnect for establishing an electrical connection with a contact locations on a semiconductor die, comprising:

• providing a substrate;
• etching a projection on the substrate;
• etching a raised contact member on the substrate with the projection projecting from a surface of the contact member and configured to penetrate the contact location to a depth less than a thickness of the contact location while the surface limits further penetration;
• forming an insulating layer over the contact member and substrate;
• forming a metal silicide layer on the contact member and projection by reaction of a metal layer and a silicon containing layer;
• and
• forming a conductive trace on the substrate in contact with the metal silicide layer.

A method for fabricating an interconnect for establishing an electrical connection with a contact location on a semiconductor die, comprising:

• providing a substrate;
• etching projections and raised contact members on the substrate, said contact members etched in a pattern that corresponds to a pattern of the contact locations on the die, each contact member including at least one projection adapted to penetrate a respective contact location on the die to a limited penetration depth that is less than a thickness of the contact location;
• forming an insulating layer over the contact members and substrate;
• forming a conductive layer on the contact members and projections;
• and
• forming a conductive trace in contact with the conductive layer.

A method for fabricating an interconnect for making an electrical connection with a contact location on a semiconductor die comprising:

• providing a substrate;
• forming a raised contact member on the substrate;
• forming a plurality of projections on the contact member, said projections extending from a surface of the contact member and configured to penetrate into the contact location while the surface limits further penetration;
• forming a conductive layer on the contact member and projections;
• and
• forming a conductive trace on the substrate in contact with the conductive layer.

A method for fabricating an interconnect for making an electrical connection with a contact location on a semiconductor die comprising:

• providing a substrate;
• forming a raised contact member on the substrate;
• forming a projection on the contact member, said projection extending from a surface of the contact member with a height of from 2000 .ANG. to 5000 .ANG., said projection configured to penetrate into the contact location to a depth less than a thickness of the contact location;
• forming a conductive layer on the contact member and projections, said conductive layer insulated from the substrate by an insulating layer;
• and
• forming a conductive trace on the substrate in contact with the conductive layer.