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US 5,686,193 AGranted
Multilayered sendust films with a gas-doped sendust seed layer
AssigneeInternational Business Machines Corporation
InventorJohn David Westwood
Life of this patent
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Abstract
A layered magnetic structure with a seed layer on a substrate and a bulk layer on the seed layer. The seed layer is a gas-doped sendust layer with a thickness of 100-800 .ANG.. The bulk layer is sendust with a thickness of 0.3-10.0 .mu.m. The seed layer and the bulk layer have different weight compositions.
Claims14
A two-layer magnetic structure comprising:
- a substrate;
- a seed layer of a first silicon-aluminum-iron alloy having a first composition, said seed layer formed on said substrate and having a thickness in the range of 100 Angstroms to 800 Angstroms;
- and
- a bulk layer of a second SiAlFe alloy having a second composition, said first SiAlFe composition having different amounts by weight of its constituent components than said second SiAlFe composition, said bulk layer formed on said seed layer and having a thickness in the range of 0.3 to 10.0 micrometers.
1 more element
A two-layer magnetic structure comprising:
- a substrate;
- a seed layer of a first silicon-aluminum-iron ("SiAlFe") alloy having a first composition, said seed layer formed on said substrate and having a thickness in the range of 100 Angstroms to 800 Angstroms, said seed layer uniformly doped with a selected gas;
- and
- A bulk layer of a second SiAlFe alloy having a second composition, said first SiAlFe composition having different amounts by weight of its constituent components than said second SiAlFe composition, said bulk layer formed on said seed layer and having a thickness in the range of 0.3 to 10.0 micrometers.
1 more element
Dependencies are inferred from the claim text.