Method of forming a metal oxide film
AssigneeKabushiki Kaisha Toshiba
InventorsKeitaro Imai, Masahiro Kiyotoshi, Haruo Okano
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Abstract
Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
Claims23
A method of forming a metal oxide film comprising the steps of:
- introducing a gas containing a metal compound selected from the group consisting of acetyl acetonate series organometallic complex compounds, into a process chamber accommodating a substrate;
- introducing a gas containing an alcohol having a hydroxyl group and an organic group into said process chamber directly;
- introducing a gas containing oxygen which has been converted to a plasma state, into said process chamber;
- and
- reacting said organometallic complex compound with said alcohol and said oxygen which has been converted to a plasma state to form the metal oxide film on the substrate within the process chamber.
A method of forming a metal oxide film comprising the steps of:
- introducing a gas containing a metal acetyl acetonate containing halogen into a process chamber accommodating a substrate;
- preparing a mixed gas including a gas containing a compound having a hydroxyl group and a gas containing oxygen;
- exciting said mixed gas at a power sufficient to generate hydroxyl free radicals but insufficient to dissociate said hydroxyl radicals into oxygen and hydrogen atoms, to produce a plasma;
- introducing the mixed gas in the plasma state into said process chamber, wherein said hydroxyl free radicals act to suppress binding of fluorine atoms from said metal acetyl acetonate to a metal;
- and
- forming the metal oxide film on the substrate.
A method of forming a metal oxide film comprising the steps of:
- introducing a gas containing a metal compound selected from the group consisting of halogen-containing acetyl acetonate series organometallic complex compounds, into a process chamber accommodating a substrate;
- introducing a gas containing an alcohol having a hydroxyl group and an organic group into said process chamber directly;
- introducing a gas containing oxygen which has been converted to a plasma state, into said process chamber;
- and
- reacting said organometallic complex compound with said alcohol and said oxygen which has been converted to a plasma state to form the metal oxide film on the substrate within process chamber.
Dependencies are inferred from the claim text.