Plasma processing apparatus and method
AssigneeTokyo Electron Limited
InventorNobuo Ishii
Life of this patent
Estimating the term…
Abstract
A plasma processing apparatus comprises a chamber for storing an object, a gas supply unit for supplying processing gas into the chamber, and high-frequency antenna, provided at least either the inside or outside of the chamber to oppose the object, for generating processing gas supplied into the chamber for processing the object, a high-frequency power source for supplying high-frequency power to the high-frequency antenna, and an electrode, provided to oppose the object and to be insulated from the high-frequency antenna and set at a reference potential, for providing a uniform electric field above the object.
Claims11
A plasma processing apparatus comprising:
- a chamber having an upper wall in which an object is placed;
- gas supply means having a gas supply pipe to said object for supplying processing gas into said chamber;
- a high-frequency antenna of one of a spiral type, a coiled type and a looped type, provided on at least one of inside and outside of said upper wall of said chamber to oppose said object, for ionizing processing gas supplied into said chamber for processing said object;
- a high-frequency power source for supplying high-frequency power to said high-frequency antenna;
- and
- an electrode mounted on said upper wall of said chamber to oppose said object on a center of said high-frequency antenna and to be insulated from said high-frequency antenna and set at a reference potential, for providing a uniform electric field above said object, and wherein
- said gas supply means includes at least one gas supply path provided in said electrode and communicating with said gas supply pipe.
Dependencies are inferred from the claim text.