Semiconductor laser having a structure of photonic bandgap material
AssigneeThomson-CSF
InventorsRomuald Houdre, Claude Weisbuch, Vincent Berger
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Abstract
Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.
Claims11
A semiconductor laser comprising at least one active layer sandwiched between two confinement layers, namely one layer with P doping and one layer with N doping, to form a PN junction, wherein said laser comprises, in at least one of the confinement layers and/or the active layer, holes positioned on each side of the cavity so that structures of photonic bandgap material are made along the lateral walls of the cavity and at two ends of the cavity.
Dependencies are inferred from the claim text.