Active semiconductor device with matched reference component maintained in breakdown mode
AssigneeMitel Corporation
InventorJonathan Orchard-Webb
Life of this patent
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Abstract
A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.
Claims10
A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprising the steps of:
- a) providing a matched reference component having similar operating characteristics to said active semiconductor device;
- b) continually supplying a current to said matched reference component to cause the breakdown thereof;
- c) continually monitoring the breakdown voltage of said matched reference component;
- and
- d) continually maintaining the operating voltage of said active semiconductor device just below said breakdown voltage.
An optimization circuit comprising:
- a) an active semiconductor device having a channel with an identifiable breakdown voltage and a length determined by an applied operating voltage;
- b) a matched reference component having similar operating characteristics to said active device;
- c) means for continually supplying current to said matched reference component to cause the breakdown thereof;
- d) means for continually monitoring the breakdown voltage of said matched reference component;
- and
- e) means for adjusting said applied voltage to maintain the operating voltage of said device at a level just below said breakdown voltage.
An optimization circuit as claimed in 5, wherein said matched reference device is designed to break down at a voltage slightly lower than said active semiconductor device.
Dependencies are inferred from the claim text.