Semiconductor photodiode having the electrodes formed on the same surface
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorEitaro Ishimura
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Abstract
A semiconductor optical device having a small difference in level between first and second electrodes includes, at a first electrode, a junction of a p-type contact and an electron trapping semi-insulating semiconductor region in an n-type semiconductor substrate which is rectifying. At the second electrode, a diode includes a p-type window region, a light absorption region, and the n-type semiconductor substrate. When light enters this diode, a photocurrent is generated. When a bias voltage is applied to the diode in a reverse direction, the photocurrent flows between the electrodes.
Claims6
A semiconductor optical device comprising:
- an n-type semiconductor substrate having front and back surfaces,
- a light absorption region in a portion of the n-type semiconductor substrate,
- a p-type window region disposed on the light absorption region in the n-type semiconductor substrate at the front surface,
- an electron trapping semi-insulating region in the n-type semiconductor substrate at the front surface and surrounding the light absorption region and the p-type window region,
- a p-type contact layer disposed on a portion of the semi-insulating region,
- a first electrode disposed on the p-type contact layer, and
- a second electrode disposed on the p-type window region and the semi-insulating region, wherein the first and second electrodes are substantially flush.
A semiconductor optical device comprising:
- a p-type semiconductor substrate having front and back surfaces,
- a light absorption region in a portion of the p-type semiconductor substrate,
- an n-type window region on the light absorption region in the p-type semiconductor substrate at the front surface,
- an electron trapping semi-insulating region in the p-type semiconductor substrate at the front surface and surrounding the light absorption region and the n-type window region,
- an n-type contact layer disposed on a portion of the semi-insulating region,
- a first electrode disposed on the n-type contact layer, and
- a second electrode disposed on the n-type window region and the semi-insulating region, wherein the first and second electrodes are substantially flush.
Dependencies are inferred from the claim text.