US 5,684,306 A · Insulated gate thyristor

Abstract

An insulated gate thyristor is provided which includes a first-conductivity-type base layer having a high resistivity, a first and a second second-conductivity-type base region separately formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, and a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region. A gate electrode is formed through an insulating film on exposed portions of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, which exposed portions are interposed between the first-conductivity-type source region and the first-conductivity-type emitter region. A first main electrode is held in contact with both the first second-conductivity-type base region and the first-conductivity-type source region. A first-conductivity-type semiconductor film is interposed between and held in contact with the first main electrode and an exposed portion of the second second-conductivity-type base region, to cooperate with the second second-conductivity-type base region to form a diode. A second-conductivity-type emitter layer is formed on the other surface of the first-conductivity-type base layer, and a second main electrode is held in contact with the second-conductivity-type emitter layer.

Claims9

Dependent claims

An insulated gate thyristor comprising:

a first-conductivity-type base layer of high resistivity;
first and a second second-conductivity-type base regions formed in spaced-apart selected areas of a surface layer of a first major surface of said first-conductivity-type base layer;
a first-conductivity-type source region formed in a selected area of a surface layer of said first second-conductivity-type base region;
a first-conductivity-type emitter region formed in a selected area of a surface layer of said second second-conductivity-type base region;
a gate electrode formed on an insulating film, wherein said insulating film is formed on exposed portions of said first second-conductivity-type base region, said first-conductivity-type base layer, and said second second-conductivity-type base region, said exposed portions being interposed between said first-conductivity-type source region and said first-conductivity-type emitter region;
a first main electrode in contact with both an exposed portion of said first second-conductivity-type base region and said first-conductivity-type source region;
a first-conductivity-type semiconductor film interposed between said first main electrode and an exposed portion of said second second-conductivity-type base region, said first-conductivity-type semiconductor film cooperating with said second second-conductivity-type base region to form a diode;
a second-conductivity-type emitter layer formed on a second major surface of said first-conductivity-type base layer;
and
a second main electrode in contact with said second-conductivity-type emitter layer.

7 more elements

An insulated gate thyristor comprising:

a first-conductivity-type base layer of high resistivity;
a first and a second second-conductivity-type base region formed in spaced-apart selected areas of a surface layer of a first major surface of said first-conductivity-type base layer;
a first-conductivity-type source region formed in a selected area of a surface layer of said first second-conductivity-type base region;
a first-conductivity-type emitter region formed in a selected area of a surface layer of said second second-conductivity-type base region;
a gate electrode formed on an insulating film, wherein said insulating film is formed on exposed portions of said first second-conductivity-type base region, said first-conductivity-type base layer, and said second second-conductivity-type base region, said exposed portions being interposed between said first-conductivity-type source region and said first-conductivity-type emitter region;
a first main electrode in contact with both an exposed portion of said first second-conductivity-type base region and said first-conductivity-type source region;
a second-conductivity-type semiconductor film in contact with an exposed portion of said second second-conductivity-type base region;
a first-conductivity-type semiconductor film interposed between said second-conductivity-type semiconductor film and said first main electrode, said first-conductivity-type semiconductor film cooperating with said second-conductivity-type semiconductor film to form a diode;
a second-conductivity-type emitter layer formed on a second major surface of said first-conductivity-type base layer;
and
a second main electrode in contact with said second-conductivity-type emitter layer.

8 more elements

Dependencies are inferred from the claim text.

Insulated gate thyristor

Life of this patent

Insulated gate thyristor

Life of this patent

Abstract

Claims9