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US 5,684,302 AGranted
Pyrodetector element having a pyroelectric layer produced by oriented growth, and method for the fabrication of the element
AssigneeSiemens Aktiengesellschaft
InventorsWolfram Wersing, Rainer Bruchhaus
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Abstract
A novel pyrodetector element is produced by oriented growth, with the aid of buffer layers, above a monocrystalline silicon substrate and thus enables the fabrication of an array of pyrodetectors having read-out and amplifier circuitry integrated on the common substrate. Proposed as the buffer layers are yttrium-stabilized zirconium oxide YSZ or magnesium oxide above an interlayer made of spinel.
Claims10
A pyrodetector element of thin-film construction, comprising:
- a) a monocrystalline silicon substrate,
- b) an epitaxial layer which is applied above the silicon substrate,
- c) a first electrode layer,
- d) a c-axis-oriented pyroelectric layer of a perovskite, and
- e) a second electrode layer,
- wherein said first electrode layer is of an electrically conductive oxide selected from a class of the perovskites having a general empirical formula (LaCa) (MnCo), O.sub.3 and (LaPbCa) (MnCoTi) O.sub.3 and wherein said pyroelectric layer is of same components as said first electrode layer, but has a different cation ratio.
3 more elements
A pyrodetector element of thin-film construction, comprising:
- a) a monocrystalline silicon substrate,
- b) an epitaxial layer which is applied above the silicon substrate,
- c) first electrode layer,
- d) a c-axis-oriented pyroelectric layer of a perovskite, and
- e) a second electrode layer,
- wherein said epitaxial layer is an epitaxial interlayer which is made of spinel and an at least oriented buffer layer applied thereabove, which is made of magnesium oxide.
3 more elements
Dependencies are inferred from the claim text.