US 5,683,968 AGranted

Method for manufacturing a superconducting device

AssigneeSumitomo Electric Industries, Ltd.

InventorsTakao Nakamura, Hiroshi Inada, Michitomo Iiyama

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Abstract

A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.

Claims10

Dependent claims

A method for manufacturing a superconducting device having a pair of superconducting electrode regions, each superconducting region consisting of a thin film of oxide superconductor having a sufficiently thick wall-thickness to serve as a superconducting electrode region, and a weak link region including a non-superconducting region and a weak link or superconducting channel, said superconducting electrode regions being positioned at opposite sides of said weak link region, both of said superconducting electrode regions and said weak link region being formed on a common plane surface of said substrate, comprising:

depositing a thin film of oxide superconductor having a thickness which is sufficient to provide said superconducting electrode regions on said substrate, and
diffusing a constituent element or elements of which said substrate is made into said thin film of oxide superconductor to produce the non-superconducting region in said thin film of oxide superconductor, such that the weak link or superconducting channel is left in said thin film of oxide superconductor over said non-superconducting region.

Dependencies are inferred from the claim text.

Facts

Application: 08/521,736Filed 31 Aug 1995 · division
Priority: JP 2-25785127 Sep 1990
Granted: 4 Nov 1997
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10N 60/207
Having three or more electrodes, e.g. transistor-like structures: field effect devices
H10N 60/0941
Of Josephson-effect devices: comprising high-Tc ceramic materials
H10N 60/124
Josephson-effect devices: comprising high-Tc ceramic materials
Y10S 505/702
Coated or thin film device, i.e. active or passive: josephson junction present