Method for manufacturing fluorinated gate oxide layer
AssigneeNational Science Counsil
InventorsWei-Shin Lu, Jenn-Gwo Hwu
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Abstract
A method for manufacturing a gate oxide layer containing fluorine is disclosed. The method includes steps of providing a substrate; depositing a fluorinated oxide layer over said substrate; and oxidizing said fluorinated oxide layer at a high temperature. The fluorinated oxide layer according to the present invention exhibits good properties in radiation hardness, hot carrier resistance and breakdown endurance. Thus, it is an excellent method for easily and cost-effectively manufacturing reliable and consistent wafers.
Claims20
A method for manufacturing a gate oxide layer containing fluorine, said method comprising steps of:
- providing a substrate;
- depositing a fluorinated oxide layer over said substrate;
- and
- oxidizing said fluorinated oxide layer at a high temperature.
A method for manufacturing a gate oxide layer containing fluorine, said method comprising steps of:
- providing a substrate;
- growing a fluorinated oxide layer over said substrate by liquid phase deposition;
- and
- heating said substrate in a processor at a high temperature, thereby oxidizing said fluorinated oxide layer.
Dependencies are inferred from the claim text.