Method of depositing a reflow SiO.sub.2 film

A method of manufacturing a semiconductor device, comprising the steps of:

• placing a semiconductor substrate with wirings thereon into a reaction chamber of a plasma CVD device of a manufacturing device;
• forming a plasma SiO.sub.2 film on said semiconductor substrate having a thickness of more than 0.1 .mu.m in the reaction chamber of said plasma CVD device;
• moving the semiconductor substrate from the reaction chamber of said plasma CVD device into a reaction chamber of a pressure-reduced CVD device of the manufacturing device;
• supplying an SiH.sub.4 gas and H.sub.2 O.sub.2 into the reaction chamber of the pressure-reduced CVD device in which the semiconductor substrate is placed to cause the SiH.sub.4 gas and H.sub.2 O.sub.2 to react to each other in a vacuum having a first pressure of below 650 Pa within the temperature range of -10.degree. C. to +10.degree. C. to form a reflow SiO.sub.2 film having a thickness of 0.4 .mu.m to 1.4 .mu.m on said semiconductor substrate;
• reducing the pressure of the vacuum in said reaction chamber of the pressure-reduced CVD device to a second pressure vacuum for more than 30 seconds;
• moving the semiconductor substrate from the reaction chamber of the pressure-reduced CVD device to the reaction chamber of the plasma CVD device;
• and
• putting said semiconductor substrate, in the reaction chamber of the plasma CVD device, at a high temperature of 300.degree. C. to 450.degree. C. for 120 seconds to 600 seconds.

A method of manufacturing a semiconductor device, comprising the steps of:

• supplying an SiH.sub.4 gas and H.sub.2 O.sub.2 in a first chamber in which a semiconductor substrate having an insulating film formed thereon is placed to cause SiH.sub.4 gas and H.sub.2 O.sub.2 to react to each other in a vacuum below 650 Pa within the temperature range of -10.degree. C. to +10.degree. C. to form a reflow SiO.sub.2 film having a thickness of 0.4 .mu.m to 1.4 .mu.m on said semiconductor substrate;
• reducing the pressure of said first chamber to a vacuum of below 6.5 Pa for 30 seconds;
• and
• putting said semiconductor substrate in a second chamber, at a high temperature of 300.degree. C. to 450.degree. C. for 120 seconds to 600 seconds.

A method of manufacturing a semiconductor device, comprising the steps of:

• placing a semiconductor substrate with wirings thereon into a reaction chamber of a plasma CVD device;
• forming a plasma SiO.sub.2 film on said semiconductor substrate having a thickness of more than 0.1 .mu.m in the reaction chamber of said plasma CVD device;
• moving the semiconductor substrate from the reaction chamber of said plasma CVD device into a reaction chamber of a pressure-reduced CVD device of a manufacturing device;
• supplying an SiH.sub.4 gas and H.sub.2 O.sub.2 into the reaction chamber of the pressure-reduced CVD device in which the semiconductor substrate is placed to cause the SiH.sub.4 gas and H.sub.2 O.sub.2 to react to each other in a vacuum below 650 Pa within the temperature range of -10.degree. C. to +10.degree. C. to form a reflow SiO.sub.2 film having a thickness of 0.4 .mu.m to 1.4 .mu.m on said semiconductor substrate;
• reducing the pressure of said reaction chamber of the pressure-reduced CVD device to a vacuum of below 6.5 Pa for 30 seconds;
• moving the semiconductor substrate from the reaction chamber of the pressure-reduced CVD device to the reaction chamber of said plasma CVD device;
• and
• putting said semiconductor substrate, in the reaction chamber of the plasma CVD device, at a high temperature of 300.degree. C. to 450.degree. C. for 120 seconds to 600 seconds.