Diamond insulator devices and method of fabrication
AssigneeHarris Corporation
InventorsGregory Schrantz, Jack Linn, Richard Belcher
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Abstract
Semiconductor device and circuits and methods of fabrication which provides multilevel interconnections with grown diamond insulation films and second level resistors in the diamond insulation. The diamond provides both good electrical insulation and good thermal conductivity. The methods also provide capacitors with second level diamond dielectrics.
Claims19
A method of fabrication of integrated circuits, comprising the steps of:
- (a) forming a silicon dioxide film on an entire semiconductor substrate containing transistor doped regions;
- (b) forming a first diamond film on the entire silicon dioxide film;
- (c) forming openings in said first diamond film which extend to said semiconductor substrate;
- (d) forming a first conductive film over said first diamond film, said first conductive film extending to said semiconductor substrate;
- (e) patterning said first conductive film to expose portions of said first diamond film;
- and
- (f) forming a second diamond film over said patterned first conductive film and adjoining to said exposed portions of said first diamond film.
A method of fabrication of integrated circuits, comprising the steps of:
- (a) forming a silicon dioxide film on an entire semiconductor substrate containing transistor doped regions;
- (b) forming a first diamond film on the entire silicon dioxide film;
- (c) forming openings in said first diamond film;
- (d) forming a first conductive film over said first diamond film, said first conductive film is a metal silicide with adherence for grown diamond;
- (e) patterning said first conductive film to expose portions of said first diamond film;
- and
- (f) forming a second diamond film over said patterned first conductive film and adjoining to said exposed portions of said first diamond film.
A method of fabrication of integrated circuits, comprising the steps of:
- (a) forming a first diamond film over a semiconductor substrate containing transistor doped regions;
- (b) forming openings in said first diamond film;
- (c) forming a first conductive film over said first diamond film;
- (d) patterning said first conductive film to expose portions of said first diamond film;
- (e) forming a second diamond film over said patterned first conductive film and adjoining to said exposed portions of said first diamond film;
- and
- (f) forming a resistor on said second diamond film.
A method of fabrication of integrated circuits, comprising the steps of:
- (a) forming a silicon dioxide film on an entire semiconductor substrate containing transistor doped regions;
- (b) forming a first diamond film on the entire silicon dioxide film;
- (c) forming openings in said first diamond film;
- (d) forming a first conductive film over said first diamond film;
- (e) patterning said first conductive film to expose portions of said first diamond film;
- (f) forming a second diamond film over said patterned first conductive film and adjoining to said exposed portions of said first diamond film;
- (g) forming openings in said second diamond film;
- (h) depositing a second conductive film over said second diamond film;
- and
- (i) patterning said second conductive film to form second level interconnections, including connections to said first level interconnections through said openings in said second diamond film.
Dependencies are inferred from the claim text.