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US 5,683,919 AGranted
Transistor and circuit incorporating same
AssigneeTexas Instruments Incorporated
InventorHua Quen Tserng
Life of this patent
Estimating the term…
Abstract
A flip-chip integrated circuit having a transistor 300 with terminals 314, 312, 320 contacted from opposite sufaces of a semiconductor substrate 302. The terminals contacted from opposite surfaces of the substrate may be vertically aligned. The active devices may also be etched or implanted to reduce parasitic capacitances and therefore improve transistor performance.
Claims6
A method of forming an integrated circuit, comprising the steps of:
- providing a substrate having a material structure including a subcollector layer adjacent said substrate, a collector layer adjacent said subcollector layer, a base layer adjacent said collector layer, and a emitter layer adjacent said base layer, said substrate having a top surface and a bottom surface;
- forming at least one transistor at said bottom surface, said transistor having a first terminal contact on said subcollector layer in a recess at said top surface and accessible from said top surface;
- forming a second terminal contact accessible from said bottom surface;
- forming said first terminal contact to be substantially vertically aligned with said second terminal contact;
- and
- attaching said second terminal to a heatsink.
3 more elements
Dependencies are inferred from the claim text.