Method of making semiconductor-on-insulator device with closed-gate electrode

A process for forming a semiconductor-on-insulator device comprising the steps of:

• providing a substrate having a semiconductor island, wherein the semiconductor island has a first conductivity type and sides and a bottom of the semiconductor island are surrounded by insulating material;
• forming a closed-gate electrode over the semiconductor island, wherein the closed-gate electrode has an inner edge and an outer edge;
• forming a plurality of body-He regions with a first dopant having the first conductivity type, wherein the plurality of body-tie regions lies adjacent to the inner edge;
• and
• forming a plurality of source regions and a drain region with a second dopant having a second conductivity type that is opposite the first conductivity, type, wherein the plurality of source regions lies adjacent to the inner edge, and the drain region lies adjacent to the outer edge,
• wherein the semiconductor-on-insulator device has a body-tied transistor that includes the closed-gate electrode, the plurality of body-tie regions, the plurality, of source regions, and the drain region.